What question did this study set out to answer?

The aim is to investigate a novel HEMT design with a recessed p-GaN gate for higher threshold voltage applications.

Design and Performance Investigation of a Dual p-GaN Recessed Gate High Electron Mobility Transistors for High Threshold Voltage Applications

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This randomized trial demonstrates improved performance in HEMTs, suggesting better applications in electronics.

The aim is to investigate a novel HEMT design with a recessed p-GaN gate for higher threshold voltage applications.
Utilized Silvaco TCAD simulations to analyze the device performance.
Designed a HEMT with a recessed p-GaN gate and a buried p-GaN region.
Measured key performance metrics including Vth, Id, gm, Ron, and SS.
Achieved a threshold voltage (Vth) of 4.5 V and a drain current (Id) of 1 A/mm.
Exhibited transconductance (gm) of 443 mS/mm with an ON-resistance (Ron) of 5.1 Ω.mm.
Demonstrated a low sub-threshold swing (SS) of 78 mV/dec and improved ON-OFF current ratio (Ion/Ioff).

Bhattacharjee et al. (2026) studied this question.

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