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March 31, 2005Electronics Letters

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

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Authors

WLW. LanfordUniversity of Illinois Urbana-ChampaignTTTsuyoshi TanakaHitachi (Japan)YOY. OtokiHitachi (Japan)

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Lanford et al. (2005) studied this question.

synapsesocial.com/papers/6a6a3e6fa03b17ebb04485aahttps://doi.org/10.1049/el:20050161
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