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July 16, 2024

Electrical Analysis of an Enhanced Stepped Hybrid Buffer HEMT with AlGaN/p-GaN/AlGaN Dual Heterojunctions

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Authors

JLJia-Chuan LinTLTai-Wei LuHYHsu-Nan Yen

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Lin et al. (2024) studied this question.

synapsesocial.com/papers/68e60240b6db643587595edchttps://doi.org/10.22541/au.172114947.75825108/v1
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer2024 · 24 citations
  2. 2Improvement of AlGaN/ GaN based HEMT with high performance rate for integrated circuit design for wide range of applications2024
  3. 3Enhancing Drain Current Performance of AlGaN/GaN HEMT through Graded AlGaN Barrier2024 · 4 citations
  4. 4Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study2024 · 3 citations
  5. 5GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers2026 · 3 citations