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March 6, 2026Applied Physics Letters

GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers

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Authors

BYBowei YuUniversity of Science and Technology of ChinaHZHaochen ZhangUniversity of Science and Technology of ChinaHLHongyu LiuChinese Academy of Sciences

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Implication

Demonstrates enhanced electrical performance in GaN HEMT through hybrid AlN layers, suggesting better applications in power electronics.

Key Points

  • The aim is to develop a GaN HEMT with improved crystal quality through optimized AlN nucleation layers.
  • Fabricated a GaN-on-sapphire HEMT with hybrid AlN nucleation layers consisting of magnetron sputtered and MO-AlN.
  • Applied an in situ thermal annealing process in an H2 atmosphere to enhance nucleation and dislocation annihilation.
  • Measured crystal quality using x-ray rocking curves for (002) and (102) diffractions.
  • Achieved low full-width half-maximum values of 53 and 179 arc sec for (002) and (102) x-ray diffractions.
  • The sheet resistance across the 4-inch HEMT layer was uniform at 309 Ω/□.
  • Demonstrated a 2DEG concentration of 1 × 10^13 cm−2 and electron mobility exceeding 2000 cm²/(V s).

Cite This Study

Yu et al. (2026) studied this question.

synapsesocial.com/papers/69aa7008531e4c4a9ff59754https://doi.org/10.1063/5.0300073
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