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June 7, 2026Open Access

Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors

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Authors

DADmitri ArteevASAlexei SakharovANAndrey Nikolaev

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Overview

Theoretically evaluates AlGaN barrier optimization for high-electron mobility transistors, suggesting improved designs.

Key Points

  • The aim is to optimize the AlGaN barrier in GaN-based high-electron mobility transistors (HEMTs).
  • Theoretical study using self-consistent Poisson–Schrödinger calculations.
  • Semi-empirical transport modeling to evaluate performance metrics.
  • Consideration of factors like Ga incorporation and strain effects.
  • Optimal barrier thickness minimizes sheet resistance to RS ~250 Ω/□.
  • Saturation drain current increases with barrier thickness and Al content.
  • Strain-induced cracking limits performance at higher Al compositions.

Cite This Study

Arteev et al. (2026) studied this question.

synapsesocial.com/papers/6a250b2d7def13d035e1b20ahttps://doi.org/10.18721/jpm.191.121
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