Fabrication and resistive switching characteristics of Al/SiO₂: GO/ITO memristor devices

Memristors, owing to their inherent characteristics, have emerged as promising candidates for next-generation information storage devices, attracting extensive research attention. Scientists continue to explore novel technologies and materials for memristor fabrication. In this study, we developed SiO 2 :Graphene Oxide (GO) composite films through facile solution processing and spin-coating techniques, subsequently constructing Al/SiO 2 :GO/ITO memristive devices with sandwich architecture via vacuum thermal evaporation deposition. The conduction mechanisms, electrical characteristics, and resistive switching behaviors were systematically investigated through dual-logarithmic fitting analysis of current-voltage curves under both forward and reverse biases. Experimental results demonstrate that the Al/SiO 2 :GO/ITO memristor exhibits remarkable non-volatile memory properties with a high switching ratio exceeding 10 4 , excellent cycling stability, and superior retention capability for both high-resistance state (HRS) and low-resistance state (LRS) (>10 4 s). Notably, the device manifests distinctive bipolar resistive switching characteristics between set voltage (-0.8 V) and reset voltage (3.1 V), with symmetrical switching behavior that presents new opportunities for constructing low-power neuromorphic computing devices. This work not only validates the application potential of inorganic/carbon-based composites in memristor technology but also provides theoretical foundations and experimental references for interface engineering design in developing high-performance resistive random-access memory devices.