Thermoelectric Properties of Molybdenum Disulfide Thin Film as Prepared by RF Magnetron Sputtering and Rapid Thermal Annealing Process

Molybdenum disulfide (MoS 2 ) is a transition metal dichalcogedides (TMDs) material. MoS 2 has potential for technological applications such as supercapacitors, photovoltaics, thermoelectrics, or other application devices. MoS 2 in nanoscale has high mechanical strength, direct band gap, and high charge carrier mobility. MoS 2 material is a good candidate as a thermoelectric device material. MoS 2 thin films were deposited using the Radio Frequency (RF) Sputtering method and then heated to form MoS 2 layers ready for testing. The substrates are placed in the sample holder, then the sputtering chamber is set to the condition that the base pressure is below 1.9 x 10 −4 Pa and the working pressure at 1.2 Pa. MoS 2 thin film deposition was carried out at room temperature and an Argon (Ar) gas flow of 38 standard cubic centimeters per minute (sccm). Deposition of MoS2 thin film using the RF Sputtering method with a deposition time of around 30 minutes and a fixed power of 200 Watts. After deposition of the MoS 2 thin film, thermal annealing treatment was carried out using MILA-5000 (Mini Lamp Annealer) for 40 minutes. Significant results were observed after the MoS 2 thin films underwent rapid annealing processes, where the film thickness was measured at 177.4 nm, with identified trace elements of Mo, Si, and O. The MoS 2 thin film samples were thermally annealed at temperatures of 600°C. The suitability of the material for thermoelectric applications is determined by its resistivity (ρ) and Seebeck coefficient (S) values. The MoS 2 layer has a resistivity of 2.62 × 10 −6 Ω·m and a Seebeck coefficient of -2.88 × 10 −4 V/K at a temperature of 59.18°C. The resistivity and Seebeck coefficient decrease with increasing temperature. the maximum power factor of 7.93 × 10 −1 W/mK 2 (ρ = 0.21x10 −6 Ohm m dan S = -4.07 x10 −4 V/K) at 344.23 °C.