Perovskite solar cells efficiency: verification of NIP device architecture

Perovskite solar cells have attracted significant attention as a promising technology for the development of next-generation solar cells. However, they face limitations in stability and lifespan, necessitating continuous improvement. Established fabrication methods and proven development techniques can expedite this progress. In this study, the synthesis and fabrication of n-i-p perovskite solar cells using the ITO/SnO 2 /Cs(MAFA)Pb(IBr) 3 /Spiro-OMeTAD/Au structure are described. Each layer was deposited using spin-coating and thermal evaporation for the metal electrode. The morphology, optical properties, and efficiency were investigated. The achievement of pinhole-free SnO 2 thin films with low surface roughness demonstrates excellent film dispersion. The device demonstrated an open-circuit voltage ( V oc ) of 1.054 V, current density ( J sc ) of 23.679 mA/cm 2 , fill factor ( FF ) of 72.44%, and achieving a maximum efficiency of 18%.