Comparison of Resistivity Distribution in P-type and N-type SiC Single Crystals Grown by the PVT Method

Key Points

• Resistivity varies notably between p-type and n-type SiC, impacting electronic device performance.
• Key finding indicates that spatial distribution of dopants affects overall conductivity metrics in SiC crystals.
• Conducted analysis using resistivity measurements on silicon carbide samples grown by the PVT method.
• Results suggest further exploration to optimize doping strategies in silicon carbide for better device efficiency.