Simulation reveals improved transmittance in thin-film IR LEDs with fluorine-doped tin oxide, indicating potential benefits over indium tin oxide.
The optical processes in the structure of a thin-film IR LED have been simulated using the finite difference method in the time domain. The parameters such as transmission and propagation efficiency of electromagnetic waves in the range of 1.2–1.4 μm have been investigated. A control device with an indium tin oxide (ITO) layer as a transparent conducting electrode has been simulated. The replacement of the ITO layer with a fluorine-doped tin oxide (FTO) layer has been considered. It has been found that with such a replacement, the transmittance of IR radiation passing through the FTO functional layers increases to 70 %, and the angular distribution of E2 increases by 10° compared to a device with an ITO layer. Thus, it is advisable to replace the layer of the transparent conducting ITO electrode with the FTO layer.
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U. Y. Turavets (2025) studied this question.