Microscopic Mechanisms of Strong Electron Scattering and Giant Anomalous Hall Effect in High‐Curie‐Temperature Fe₃GaTe₂ Van Der Waals Films

Van der Waals ferromagnet Fe 3 GaTe 2 with room‐temperature perpendicular magnetic anisotropy and strong anomalous Hall effect has attracted considerable interest for their potential in spintronics. However, the microscopic mechanisms and manipulation of the electron scattering and the anomalous Hall effect of Fe 3 GaTe 2 have remained unsettled. Here, strong tuning of the electron scattering and anomalous Hall effect of pattern‐defined Fe 3 GaTe 2 Hall‐bar devices with perpendicular magnetic anisotropy, high Curie temperature (340 K, as high as that of Fe 3 GaTe 2 bulk), and giant anomalous Hall effect is demonstrated by varying the layer thickness and temperature. Temperature‐dependent resistivity experiments reveal that the electron scattering of the high‐quality Fe 3 GaTe 2 is dominated by impurity scattering and phonon scattering, regardless of the thickness. Combined temperature‐ and thickness‐dependent scaling analyses of the anomalous Hall resistivity reveal that the anomalous Hall effect of the Fe 3 GaTe 2 is predominantly from the positive, temperature‐independent skew‐scattering contribution that competes with negative temperature‐independent, side‐jump contribution, and negative, temperature‐dependent intrinsic Berry‐curvature contribution. The intrinsic anomalous Hall conductivity decreases rapidly with increasing impurity scattering, which is consistent with the characteristic variation of intrinsic Hall conductivities in the dirty‐metal regime. These findings advance the understanding of electron scattering and the anomalous Hall effect in van der Waals magnets and would benefit the application of the Fe 3 GaTe 2 in spintronics.