Functionalization of Si₃N₄ with Aldehyde Inhibitor for Area Selective Deposition of HfO₂ and SiO₂

Byungchan Lee; Seungwon Shim; Trinh Ngoc Le; Aravind H. Patil; Chi Thang Nguyen; Youngho Kang; Tae Hoon Cheon; Soo‐Hyun Kim; Han‐Bo‐Ram Lee

doi:10.1039/d5tc01969a

January 1, 2025Journal of Materials Chemistry C

Functionalization of Si₃N₄ with Aldehyde Inhibitor for Area Selective Deposition of HfO₂ and SiO₂

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Key Points

Area selective atomic layer deposition enhances the structuring of Si devices, enabling complex geometries.
The application of an aldehyde inhibitor results in effective functionalization, leading to better material deposition.
This approach offers a promising alternative to traditional photolithography techniques in nano-fabrication.
Potential limitations include the need for precise control over deposition parameters to achieve optimal results.

Implication

Research demonstrates area selective atomic layer deposition of HfO2 and SiO2 on Si devices, highlighting improved structuring methods.

Abstract

Area selective atomic layer deposition (AS-ALD) has emerged as a promising strategy to address challenges in 3D nano-structuring of Si devices and the physical limitations of photolithography. Herein, we utilized...

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Cite This Study

Lee et al. (2025) studied this question.

synapsesocial.com/papers/68c1c24454b1d3bfb60f024f https://doi.org/10.1039/d5tc01969a

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Functionalization of Si₃N₄ with Aldehyde Inhibitor for Area Selective Deposition of HfO₂ and SiO₂

Key Points

Implication

Abstract

Discussion

Cite This Study

Functionalization of Si₃N₄ with Aldehyde Inhibitor for Area Selective Deposition of HfO₂ and SiO₂

Key Points

Implication

Abstract

Discussion

Cite This Study

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