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September 10, 2025Nature CommunicationsOpen Access

Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design

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This research demonstrates fatigue-free ferroelectricity with Hf0.5Zr0.5O2-based heterostructures, suggesting enhanced stability and reliability.

Achieving fatigue-free performance in Hf0.5Zr0.5O2 ultrathin films leads to remarkable reliability.
The introduction of a CeO2-x/Hf0.5Zr0.5O2 heterointerface significantly improves switching characteristics.
An innovative capacitor architecture minimizes imprint effects, enhancing long-term cycling performance.
The interfacial design approach enables the ultrathin films to exceed 1011 switching cycles without degradation.

Zhou et al. (2025) studied this question.

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This research demonstrates fatigue-free ferroelectricity with Hf0.5Zr0.5O2-based heterostructures, suggesting enhanced stability and reliability.