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September 10, 2025Crystal Growth & DesignOpen Access

Growth of High Aspect Ratio Wurtzite GaAs Nanowires

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Demonstrates enhanced growth of wurtzite GaAs nanowires with aspect ratios nearing 200, indicating new possibilities in semiconductor applications.

Aspect ratios of nearly 200 were achieved in wurtzite GaAs nanowires, exceeding previous limitations.
The stacking fault density was measured at 10 SF/μm, indicating potential structural quality.
Methods involved Ga-pulsing strategies based on pulse duration and frequency to ensure phase stability.
This work expands the field of III-V semiconductors, highlighting applications in nanomaterials development.

Jansen et al. (2025) studied this question.

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Demonstrates enhanced growth of wurtzite GaAs nanowires with aspect ratios nearing 200, indicating new possibilities in semiconductor applications.