Electric Field‐Dependent Optoelectronic Properties in ZnSe/CdSe/ZnSe Quantum Well: Unveiling the Effects of Razavy and Pöschl–Teller Confining Potentials

Effects of electric field and the structural parameters on the optoelectronic properties of a ZnSe/CdSe/ZnSe quantum well are reported taking into account the Razavy and Pöschl–Teller confinement potentials. The confined sub‐band energies of the structures and thereby the binding energies of the confined exciton are computed. The variational method within a single‐band effective mass approximation is employed. The computations are extended to observe the optical properties with Razavy and Pöschl–Teller potential parameters using the diagonalization method. The total absorption coefficients and changes of refractive index are investigated with the suitable structural parameters of potentials in the presence of electric field. Further, the results show that the electric field induces a redshift in both the absorption coefficients and changes of refractive index and it is hoped that the obtained results can be very useful in the design of next‐generation optical devices.