Experimental evidence reveals 180° Néel vector switching in Cr2O3, highlighting advanced antiferromagnetic applications.
The 180° switching of the perpendicular Néel vector induced by the spin-orbit torque (SOT) presents significant potential for ultradense and ultrafast antiferromagnetic SOT-magnetoresistive random-access memory. However, its experimental realization remains a topic of intense debate. Here, unequivocal evidence is provided for the SOT-induced 180° switching of the perpendicular Néel vector in collinear antiferromagnetic Cr2O3 in a Pt/Cr2O3/Co trilayer structure. It is demonstrated that the 180° switching of the perpendicular Néel vector in Cr2O3 can lead to the unconventional switching behavior of the Co layer on top of it. The switching polarity of the Co layer can be reversed after the insertion of the Cr2O3 layer. Moreover, the exchange bias directions are switched simultaneously with the Co layer. The switching ratio of the Co layer is sensitive to the antiferromagnetic states of Cr2O3 and can be tuned by field cooling. The results not only underpin the electrical switching of the perpendicular Néel vector in Cr2O3 but are also beneficial for the development of antiferromagnetic-based devices.
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Luo et al. (2025) studied this question.
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