Effects of quantum confinement effect on intrinsic gate capacitance in depleted state of junctionless surrounding-gate nanosheet NMOSFET considering drain/source extension zones

Abstract In an effort to modeling of junctionless (JL) surrounding-gate (SG) nanosheet MOSFET more precisely, a model for computing intrinsic gate capacitance in depleted state of the above-mentioned device is built for the first time. The model considers drain/source extension zones and quantum confinement effect, it is identified by the simulation results of Sentaurus TCAD. Alterations of intrinsic total gate capacitance, gate-to-drain capacitance, gate-to-source capacitance with the channel width, height, doping concentration, the gate bias, the drain bias including and not including quantum confinement effect are researched, respectively. The results reveal effects of quantum confinement effect on intrinsic total gate capacitance, gate-to-drain capacitance, gate-to-source capacitance. The model will provide quantum corrections of intrinsic gate capacitance in the above-mentioned device.