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This is a Quantitative Study study.

September 12, 2025

Optimization of the Forming Process and Regulation of the Conductive Filament for HfO2 -based RRAM devices with Nb2O5 TEL insertion layers

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This study demonstrates improved switching performance in RRAM using Nb2O5 as a thermal enhancement layer, suggesting design optimizations.

The introduction of Nb2O5 improves switching performance, reducing switching voltage and power consumption while increasing device stability.
Temperature and oxygen vacancy distributions were simulated in the forming, set, and reset processes of RRAM devices.
Modulating Nb2O5 layer thickness allows precise control over the rupture position of the conductive filament during the reset process.
The electro-thermal coupling model developed enhances understanding of the RRAM's conduction mechanisms based on oxygen vacancy.

Yang et al. (2025) studied this question.

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This study demonstrates improved switching performance in RRAM using Nb2O5 as a thermal enhancement layer, suggesting design optimizations.