This research demonstrates the impact of Ho3+ doping on energy-storage properties in PLZT ceramics, suggesting improvements in capacitor technology.
The development of dielectric capacitors with high energy-storage density and ultrafast discharge capability is essential for next-generation pulsed power systems. In this work, (Pb, La, Ho, Zr, Ti)O3 (PLZTH) ceramics were fabricated via medium-temperature sintering (950–1100 °C) combined with Ho3+ doping to systematically tailor their energy-storage properties. This processing strategy not only mitigates Pb volatilization but also enhances compatibility with base-metal electrodes such as Ni and Cu. In addition, Ho3+ ions exhibit amphoteric doping behavior, which contributes to the enhancement of relaxor characteristics and grain refinement. H4 ceramic delivers an outstanding recoverable energy-storage density (Wrec) of 0.91 J/cm3 and a high energy efficiency (η) of 87% under 216 kV/cm, along with a power density (PD) of 28.8 MW/cm3 and an ultrafast discharge time (t0.9) of only 4.97 ns at 180 kV/cm. This study not only proposes a viable route toward high-performance medium-temperature-sintered PLZT ceramics but also elucidates the effective mechanism of Ho3+ amphoteric doping in modulating the relaxor state and properties of perovskite-based ceramics.
No takes yet. Share an insight, caveat, or question.
Xu et al. (2025) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: