This response analyzes electron doping effects in Cu-doped cadmium sulfur films, suggesting enhanced carrier concentrations through both experiments and theoretical calculations.
This is a response to a comment, “Unsubstantiated Anomalous Electron Doping in CdS via Cu Substitution for Cd”. This reply responds to concerns regarding electron doping in copper‐doped cadmium sulfur (CdS: Cu) thin films. Here, both experimental and theoretical calculation results confirming the doping effect are presented: 1) Hall effect measurements conducted across other independent laboratories consistently demonstrate carrier concentrations of ≈10 20 cm −3 in Cu‐doped CdS films; 2) theoretical calculations demonstrate a significant enhancement in carrier concentration through Cu doping; 3) inductively coupled plasma mass spectrometry (ICP‐MS) analysis exhibits Cu/Cd mole ratios of 2.63–7.02% in samples (Cu‐50 to Cu‐150). The results demonstrate the doping effect and highlight the necessity for advanced structural characterization and multi‐scale modeling to address composition and structure challenges of solution‐processed CdS films in future studies.
No takes yet. Share an insight, caveat, or question.
Mo et al. (2025) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: