Stability of SnSe-Based Thermoelectric Compounds

SnSe compounds are studied as promising candidates for thermoelectric (TE) applications, primarily due to their remarkable achievement of a high ZT value and the relative abundance of their constituent elements. In former studies, a significant disparity in the performance of polycrystalline SnSe compounds has been observed, and the reasons for the non-reproducibility have been investigated. This study focuses on the impact of sintering temperature on the thermoelectric properties of both Br-doped and undoped SnSe materials. Through a targeted synthesis approach, we achieved a ZT value of 1.04 at T = 873 K. The results reveal a critical challenge in controlling the mobility of ions and defects for long-term application of SnSe-based thermoelectric materials. The peak ZT values observed in the initial measurements are not sustainable, as the thermoelectric performance experiences a decline during multiple heating–cooling cycles. This issue is further underscored by extended annealing experiments, which resulted in a substantial ZT decrease of approximately 50%. These outcomes emphasise the need for a comprehensive understanding of the long-term stability of SnSe materials in thermoelectric applications. Additionally, they emphasise the importance of conducting heating–cooling measurements in thermoelectric systems, particularly when aiming to achieve and maintain high ZT values for longer periods.