Research on Critical Technologies of Nanoimprint Lithography Process in Semiconductor Manufacturing

Nanoimprint lithography (NIL), as a non-conventional pattern transfer technique, presents unique competitiveness in the fabrication of semiconductor structures for medium-to-low resolution, cost-sensitive, and high-volume applications, owing to its advantages in high resolution, high throughput, low cost, and scalability. Compared with conventional lithography, NIL achieves high-precision pattern transfer beyond the optical diffraction limitation by directly imprinting and transferring patterns through mechanical contact, without relying on complex optical systems, thereby significantly reducing equipment and operational costs. This article systematically reviews the fundamental principles of NIL and its major process types, including thermal nanoimprint lithography (T-NIL), ultraviolet nanoimprint lithography (UV-NIL), and roller nanoimprint lithography (R-NIL), elaborating on the characteristics and applicable scenarios of each in terms of resolution, process conditions, substrate compatibility, throughput, and cost. Furthermore, a multi-dimensional comparison is conducted to analyze NILs competitive positioning within the current universal lithography technology landscape, while potential future development directions are outlined. Although NIL still faces challenges such as limited mold lifetime and pattern flexibility, advancements in material engineering, process optimization, and technology integration are expected to broaden its industrialization prospects.