Deposition, Structural, Electrical and Hall Measurement Properties of Chemical Bath Deposited CuInSe2-xSx (x=0.5) Thin Films

A thin film of the Quaternary alloy semiconductor compound CuInSe2- xSx was made using the chemical bath deposition method. The solution used included CuCl2, InCl2, thiourea (H2N-CS-NH2), and Na2SeSO3. The structure of the thin film was studied using X-ray diffraction. The results showed that the film has a chalcopyrite structure and is made of many small crystals. The orientation of these crystals showed a preference for the (112) direction. The electrical resistivity of the thin film material was measured by using two probe method in the temperatures range 303 K and 473 K. The Arrhenius equation was used to find the activation energy. The I-V curves for the CuInSe2- xSx thin films were drawn both in the dark and under different light intensities. These curves showed diode-like behavior, indicating that an Ag contact forms a Schottky diode with the CuInSe2- xSx film. The Hall effect was used to find the mobility and carrier concentration of the film at room temperature, and the Van der Pauw-Hall method was used for these calculations.