September 12, 2025Open Access

Defect Density Reduction in 4H-SiC (0001) Epilayer via Growth-Interruption during Buffer Layer Growth

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Growth-interruption method reduces killer defect density by approximately 45%, enhancing epilayer quality.
Significant reductions were observed in in-grown stacking faults and basal plane dislocations in the drift layer.
Kinetic Monte Carlo simulations were utilized to model the defect reduction mechanisms during growth.
The approach provides an added margin against bipolar degradation by terminating defects early in the buffer layer.

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Implication

This research demonstrates reduced killer defect density in SiC epilayers using growth-interruption, highlighting a novel method to improve buffer layer integrity.

Cite This Study

Kumar et al. (2025) studied this question.

synapsesocial.com/papers/68d44c5531b076d99fa563a9 https://doi.org/10.4028/p-cv0eru

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Implication

This research demonstrates reduced killer defect density in SiC epilayers using growth-interruption, highlighting a novel method to improve buffer layer integrity.

Defect Density Reduction in 4H-SiC (0001) Epilayer via Growth-Interruption during Buffer Layer Growth

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Implication

Cite This Study

Defect Density Reduction in 4H-SiC (0001) Epilayer via Growth-Interruption during Buffer Layer Growth

Key Points

Discussion

Implication

Cite This Study

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