Miniaturized Reconfigurable WO3–x/WSe₂‐Based 2D Radio‐Frequency Switches with Integrated Attenuator and Phase Shifter for Next‐Gen Communication

Integrating 2D materials into radio‐frequency (RF) passive devices offer precise signal modulation, size reduction, and energy efficiency, fulfilling the crucial need for ultrafast, low‐power, and scalable components in upcoming communication technologies. Here, an ultrafast 2D /WSe 2 RF switch, showing stable bipolar resistive switching (3.2 ns, 3.7 nJ) with exceptional RF performance with low insertion loss (<0.7 dB), high isolation (>30 dB), and high cutoff frequency (25.2 THz) up to 67 GHz, is presented. The switching mechanism is investigated to filling a critical gap in the understanding of 2D RF switch. To cater the growing RF systems complexities, different multi‐port RF switches (2 × 2 matrices, single‐pole‐double‐throw (SPDT), and double‐pole‐double‐throw (DPDT) cross configurations) are pioneered and proposed, and miniature reconfigurable attenuators with 11 discrete states (3–33 dB, DC‐34 GHz) and a phase shifter offering six phase steps (0° ‐ 120°, DC‐46 GHz) are innovatively introduced. This research contributes to advancing the understanding of 2D RF devices and provides valuable insights for the development of next‐generation RF communication.