Voltage control spin mixing conductance in TMDCs/ferromagnet heterostructures

The efficiency of spin current generation and transmission is crucial for the performance of spin–orbit torque devices. Here, the spin mixing conductance serves as a pivotal parameter to quantify spin transport efficiency at ferromagnetic/nonmagnetic interfaces. To date, most studies have focused on optimizing the efficiency of spin current generation, while the modulation of interfacial spin transparency remains underexplored. In this work, we fabricate freestanding MoS2/NiFe heterostructures with intrinsically high spin mixing conductance surpassing conventional ferromagnetic systems by two orders of magnitude. Owing to the high tunability of the band structure in MoS2 with strain and charge doping, a 135% enhancement in the spin mixing conductance of MoS2/NiFe heterostructures has been achieved using PMN-PT ferroelectric single-crystal substrates. Our findings demonstrate a model for dynamically tuning spin transport at 2D/ferromagnetic interfaces and further provide foundational insight into the design of flexible, freestanding spintronic devices with ultralow power consumption and field-tunable functionality.