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This is a Experimental Study study.

September 16, 2025APL MaterialsOpen Access

Sb doping effect on transport behavior in the topological insulator Bi2Se3

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Investigation of transport properties in Sb-doped Bi2Se3 films, highlighting the relationship between doping and electronic behavior.

Excellent topological surface conduction observed in Sb-doped Bi2Se3 films, demonstrating effective control of transport properties.
Carrier mobility remains unaffected by Sb concentrations, suggesting phonon scattering is dominant over impurity scattering in the samples.
Coherence length shows significant variation with Sb doping at low temperatures (< 30 K), indicating strong electron–electron interactions.
Fabrication of EuS/Bi2−xSbxSe3 heterostructures reveals the necessity of interface quality to achieve exchange coupling in topological insulators.

Wang et al. (2025) studied this question.

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