Monolayer BX (X = P, As, Sb): Emerging High‐Performance Channel Materials for Advanced Transistors

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This study evaluates monolayer BX for high-performance transistors, revealing significant improvements in subthreshold swings and on-state currents.

Monolayer BP and BAs exhibit high on-state currents, crucial for effective transistor performance.
Under biaxial tensile strain, BAs achieves subthreshold swings as low as 43.35 mV dec −1 for n-type transistors.
Using density functional theory, monolayer BX is assessed for advanced metal-oxide-semiconductor and tunnel field-effect transistors.
These findings suggest monolayer BX can reduce power consumption and enhance transistor speeds, essential for miniaturized electronics.

Lang et al. (2025) studied this question.

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Authors

This study evaluates monolayer BX for high-performance transistors, revealing significant improvements in subthreshold swings and on-state currents.

Monolayer BP and BAs exhibit high on-state currents, crucial for effective transistor performance.
Under biaxial tensile strain, BAs achieves subthreshold swings as low as 43.35 mV dec −1 for n-type transistors.
Using density functional theory, monolayer BX is assessed for advanced metal-oxide-semiconductor and tunnel field-effect transistors.
These findings suggest monolayer BX can reduce power consumption and enhance transistor speeds, essential for miniaturized electronics.

Lang et al. (2025) studied this question.

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