A versatile TixY(1-x)N plasmonic sensor overcoming noble-metal limitations for CMOS compatible sensing

In this paper, a slanted horizontal extensions integrated I-beam shaped 𝑇𝑖𝑥𝑌1−𝑥𝑁-insulator-𝑇𝑖𝑥𝑌1−𝑥𝑁 structured plasmonic refractive index sensor has been introduced and investigated. 𝑇𝑖𝑥𝑌1−𝑥𝑁, a conductive ternary nitride, possesses the ability to overcome the challenges including high optical losses, oxidation, and incompatibility with CMOS processes. The sensor's compatibility with standard CMOS processes paves the way for seamless integration into existing semiconductor manufacturing platforms, ensuring scalability and cost-efficiency. The sensor's performance is evaluated using the Finite Element Method (FEM), yielding an optimized geometry with a maximum sensitivity of 819nm/RIU and a maximum figure of merit (FOM) of 32 RIU⁻¹. The proposed structure exhibits strong potential as an air pressure sensor leveraging its capability to detect minute refractive index variations. Our work introduces a sensor design that not only overcomes the limitations associated with traditional plasmonic materials but also offers a versatile and highly sensitive platform for real-world sensing applications.