Contact resistance decrease of amorphous In-Ga-Zn-O thin film transistors by interposed atomic-layer-deposited amorphous Zn-Sn-O interlayer †

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This is a Experimental Study study.

Seong Keun Kim; Hong Jip Kim; Jinheon Choi; Sahngik Aaron Mun; Yonghee Lee; Sukin Kang; Jaesoon Choi; Jaewon Ham; Seoryong Park; Subin Moon; Myung-Sup Um; Cheol Seong Hwang

doi:10.1039/d5tc02972d

January 1, 2025Journal of Materials Chemistry C

Contact resistance decrease of amorphous In-Ga-Zn-O thin film transistors by interposed atomic-layer-deposited amorphous Zn-Sn-O interlayer †

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Key Points

Contact resistance decreased significantly after adding a 2-nm amorphous Zn-Sn-O interlayer, optimizing functional performance.
The study observed that varying Sn concentrations of 42 at% and 54 at% influenced the contact resistance outcomes.
Observation involved the fabrication and testing of thin film transistors employing atomic-layer deposition methods.
Results suggest that integrating interlayers can enhance the efficiency of amorphous oxide transistors.

Implication

Fabrication of thin film transistors reveals decreased contact resistance with Zn-Sn-O interlayers, indicating potential for improved device performance.

Abstract

In this study, thin-film transistors were fabricated to examine the effects of interposing a 2-nm-thick amorphous ZnSnO (a -ZTO) interlayer (IL) with two distinct Sn concentrations of 42 at% and 54...

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Cite This Study

Kim et al. (2025) studied this question.

synapsesocial.com/papers/68d4567431b076d99fa5bd35 https://doi.org/10.1039/d5tc02972d

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Contact resistance decrease of amorphous In-Ga-Zn-O thin film transistors by interposed atomic-layer-deposited amorphous Zn-Sn-O interlayer †

Key Points

Implication

Abstract

Discussion

Cite This Study

Contact resistance decrease of amorphous In-Ga-Zn-O thin film transistors by interposed atomic-layer-deposited amorphous Zn-Sn-O interlayer †

Key Points

Implication

Abstract

Discussion

Cite This Study

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