17‐2: Characterization of A‐In‐Ga‐Zn‐O Field Effect Transistors with ALD‐Grown IGZO Channel Layer

The A‐In‐Ga‐Zn‐O field effect transistors are proposed, with the a‐IGZO channel layer deposited by atomic layer deposition (ALD). The characterization of the transistors are researched. The situation where different concentration of components (In:Ga:Zn) are also considered, including 1:1:1, 2:1:1 and 3:1:1.