Analysis reveals enhanced reliability and thermal stability in InGaZnOx FETs with increased zinc, suggesting better performance for 3-D LSI applications.
We fabricated nanosheet oxide semiconductor FETs with InGaZnOx (IGZO) channel grown by thermal atomic layer deposition (ALD) process. The effects of annealing, channel thickness, and composition on performance and reliability were systematically investigated. IGZO FETs achieved normally-off operation with positive threshold voltage (Vth) while maintaining high mobility compared to InGaOx (IGO) FETs. The devices showed thermal stability up to 400℃ post-deposition annealing, compatible with BEOL process. Excess oxygen is a unique issue in ALD by oxygen-rich chemical reaction process compared to sputtering. The positive bias stress reliability issue in thin channel IGO FETs caused by excess oxygen was mitigated by adding Zn. This study can provide an insight for designing IGO-based FETs in terms of composition and channel thickness optimization for 3-D LSI applications.
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Sakai et al. (2025) studied this question.
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