Experimental study demonstrates enhanced performance and stability in gate-all-around oxide semiconductor transistors, highlighting scalable pathways for three-dimensional memory integration.
In this article, we report performance enhancement and reliability improvement of oxide semiconductor FETs (OS FETs) by polycrystalline Ga-doped InOx(poly-IGO). Atomic layer deposition (ALD) and post-deposition annealing (PDA) were employed to achieve crystallization of IGO. A systematic study of bottom-gate (BG) FETs with varied Ga concentrations and film thicknesses identified optimized conditions yielding a mobility up to 81 cm2/V ⋅ s. Low-temperature measurements were conducted to physically understand the mobility improvement. The carrier transport mechanisms were discussed. Then, we developed a novel selective crystallization method in the OS stack for process integration and device operation of gate-all-around (GAA) nanosheet (NS) IGO FETs. The fabricated GAA IGO FETs showed normally-OFF operation, high ON-current of 326 μA/μm, and a steep subthreshold slope of 68 mV/dec. In addition, GAA NS FETs exhibited further improved bias stress stability. This work provides a scalable strategy of poly-OS channels for monolithic 3-D (M3D) integration and 3-D memory such as 3-D DRAM and 3-D NAND.
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Park et al. (2025) studied this question.
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