Temperature-Dependent Fluorescent Properties of Single-Photon Emitters in 3C-SiC

Silicon carbide (SiC) is a representative wideband-gap semiconductor with remarkable properties, such as high breakdown field strength, high thermal conductivity, and high carrier saturation mobility. Meanwhile, single-photon emitters (SPEs) in SiC have attracted considerable attention owing to their excellent fluorescence performances and promising applications in the quantum realm. Here, we conducted a systematic experimental investigation into the temperature-dependent characteristics of the SPEs in cubic silicon carbide (3C-SiC) crystal. Over a temperature span from 293 K to 373 K, the variations in fluorescence intensity, fluorescence lifetime, fluorescence spectra, polarization characteristics, and second-order autocorrelation function g2(τ) were examined. The fluorescence properties of defects showed extraordinary stabilization even when the temperature was raised to 373 K. Based on the above characteristics and combined with the excellent properties of SiC materials, this study provides strong evidence that SPEs in 3C-SiC can serve as information carriers capable of operating stably under high-temperature conditions.