Low-Energy Nanoporous Silicon Processing Technology for Next-Generation Optoelectronic Devices

This study develops a low-energy, high-precision nanoporous silicon process technology combining electrochemical etching with multi-wavelength laser irradiation and ultrasonic vibration to precisely control the size, porosity, and distribution of the nanoporous silicon structure and examines its potential applications in next-generation optoelectronic devices. This approach overcomes the challenges of poor pore uniformity and structural stability in conventional processes. The effects of different laser parameters, electrochemical conditions, and plasma bonding on the morphology are systematically analyzed. Additionally, the luminescence of the nanoporous silicon layer and its effectiveness in porous silicon diode devices were evaluated. Under 633 nm laser irradiation at 20 mW, the porosity reached 31.24%, exceeding that obtained with longer-wavelength lasers. The PS diode devices exhibited stable electroluminescence with a clear negative differential resistance (NDR) effect at 0~5.6 V. This technique is expected to significantly reduce energy consumption and simplify the manufacturing of silicon-based light-emitting devices. It also offers a scalable solution for next-generation silicon-based optoelectronic devices and advances the development of solid-state lighting and optoelectronics research.