A Low-Voltage, Low-Power 2.5 GHz Ring Oscillator with Process and Temperature Compensation

A ring-oscillator based voltage-controlled oscillator (VCO) architecture with reduced frequency drift across temperature and process variations is presented in this paper. The frequency stability is achieved through two dedicated compensation techniques: a temperature compensation circuit that generates a proportional-to-absolute-temperature (PTAT) current to mitigate frequency shifts due to temperature changes, and a process compensation circuit that dynamically adjusts the frequency based on detected process corners. The proposed design is implemented in a 22 nm CMOS technology with a 0.8 V supply voltage and targets a nominal oscillation frequency of 2.5 GHz. The post-layout simulation results demonstrate a significant improvement in frequency stability, reducing temperature-induced frequency drift from 23.9% to a range of 5.4% over the −40 °C to 125 °C temperature range for the typical corner. Combining temperature and process compensation, the frequency drift is improved from 47.3% to better than 7.2%. The VCO also achieves a phase noise value about −80 dBc/Hz at a 1 MHz offset with an average power consumption of 380 µW, including the tuning mechanism and the compensation circuits.