This approach improves vehicle power density and enables advanced features for ground combat vehicles, suggesting enhanced mission effectiveness.
Increasing the mission capability of ground combat and tactical vehicles can lead to new concepts of operation that enhance safety and effectiveness of warfighters. High-temperature power electronics enabled by wide-bandgap semiconductors such as silicon carbide can provide the required power density to package new capabilities into space-constrained vehicles and provide features including silent mobility, boost acceleration, regenerative braking, adaptive cooling, and power for future protection systems and command and control (C2) on the move. An architecture using high voltage [1] would best satisfy the ever-increasing power demands to enable defense against unmanned aerial systems (UAS) and offensive directed energy (DE) systems for advanced survivability and lethality capabilities.
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Eddins et al. (2025) studied this question.
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