Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are key enablers of power-electronics converters for aerospace platforms, where high efficiency, weight reduction, and thermal robustness are critical requirements. This paper presents the main challenges associated with the use of these technologies, including protection requirements, electromagnetic compatibility, and thermal management, as well as the material advantages that enable higher switching frequencies and lower losses compared to conventional Si technologies. A comparative analysis of semiconductor technologies and suitable power-conversion topologies for the aerospace context is provided. Representative laboratory-scale experimental validation is presented, including the development of a DC–DC boost converter and a DC–AC full-bridge inverter, which are linked through the common DC-link and are used for interfacing batteries and an electrical motor, both based on GaN and SiC diodes. The results demonstrated the correct operation, with stable high-frequency performance under controlled laboratory conditions, supporting aerospace-oriented development, although evaluated in a laboratory environment, confirming the potential of WBG technologies for future power-conversion architectures.
Morais et al. (Tue,) studied this question.
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