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This is a Experimental Study study.

September 18, 2025

On-Chip Squeezed Light Generation in Thin-Film SiN Photonic Integrated Chips

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The maximum achieved squeezing level was 1.4 dB, highlighting significant advancements in squeezed light generation.
An anti-squeezing level of 8.2 dB was demonstrated, showcasing the chip's performance in quantum optics applications.
This research utilized a normal-dispersion thin-film silicon nitride photonic integrated chip to create two-mode squeezed states.
The findings suggest that on-chip squeezed light generation could benefit future quantum computing and sensing technologies.

Implication

Experimental demonstration shows squeezed vacuum states in thin-film silicon nitride chips, indicating potential advances in photonics.

Abstract

We present an experimental demonstration of the generation of two-mode squeezed vacuum states on a normal-dispersion thin-film silicon nitride photonic integrated chip, achieving a maximum squeezing level of 1.4 dB and an anti-squeezing level of 8.2 dB.

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Cite This Study

Liu et al. (2025) studied this question.

synapsesocial.com/papers/68d463f131b076d99fa6398e https://doi.org/10.1364/cleo_fs.2025.ff103_6

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Implication

Experimental demonstration shows squeezed vacuum states in thin-film silicon nitride chips, indicating potential advances in photonics.

On-Chip Squeezed Light Generation in Thin-Film SiN Photonic Integrated Chips

Key Points

Implication

Abstract

Discussion

Cite This Study

On-Chip Squeezed Light Generation in Thin-Film SiN Photonic Integrated Chips

Key Points

Implication

Abstract

Discussion

Cite This Study

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