Electrically detected magnetic resonance (EDMR) of introduced spin defects in silicon carbide for quantum magnetometry

Quantum sensing offers a path toward compact self-calibrating magnetometers for heliophysics and planetary missions, where conventional field probes struggle with size, weight, power, and radiation tolerance. The Quantum Sensing and Spin Physics (Q-SASP) laboratory at NASA is addressing these limitations by exploiting spin defects in SiC diodes and reading them out via electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). Here, we present a comprehensive resonance-to-resonance simulation of EDMR signatures arising from the negatively charged silicon vacancy in 4H-SiC. The model reproduces the experimental spectral response and quantitatively demonstrates that spin-dependent recombination pathways primarily govern magnetometric sensitivity and overall device performance. Additionally, we characterize the power-dependent traits of resonance features to demonstrate how RF drive conditions affect signal amplitudes and linewidths while highlighting practical operating regimes for device operation.