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September 19, 2025

Device applications of the giant direct and inverse spin Hall effect in BiSb topological insulator

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Authors

PHPham Nam Hai

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Overview

This research reveals the potential of BiSb's spin Hall effect in SOT-MRAM and magnetic sensing, implying significant advancements in data storage technology.

Key Points

  • BiSb demonstrates a giant spin Hall effect conducive for device applications like SOT-MRAM.
  • Integration of BiSb with ferromagnetic multilayers resulted in ultrafast switching of approximately 1 ns.
  • BiSb's unique properties enable high-level applications in magnetic sensors for hard disk drives.
  • Collaborations with major vendors aim to optimize BiSb technologies for advanced data storage solutions.

Cite This Study

Pham Nam Hai (2025) studied this question.

synapsesocial.com/papers/68d464ea31b076d99fa641aahttps://doi.org/10.1117/12.3062225
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Also Consider

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