This new electrochemical etching method improves interface roughness in III-nitride layers, suggesting enhanced performance for devices like micro-light-emitting diodes.
Wafer-scale III-nitride epitaxial layers are selectively lifted off via an innovative electrochemical etching method, allowing epilayers to achieve ultra-high relaxation, preserved quality, and sub-nanometer root-mean-square interface roughness for diverse applications, as demonstrated with micro-light-emitting diodes.
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Bi et al. (2025) studied this question.
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