Ultra-fast high-power Ge PIN photodetectors with record-high bandwidth responsivity product of 130 GHz·A/W in 300-mm monolithic CMOS silicon photonics foundry

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This is a Experimental Study study.

Yusheng Bian; Won Suk Lee; Abdelsalam Aboketaf; Sujith Chandran; Scott D Benjamin; Crystal Hedges; Teodor K. Stanev; Hanyi Ding; Michelle Zhang; Qidi Liu; Takako Hirokawa; Ming Gong; Francis O. Afzal; Massimo Sorbara; J. Holt; Helen Wong; Arman Najafi; Ben Cadieux; Zahidur Chowdhury; Kevin Dezfulian; Kate McLean; James Garofolo; Mrunal Shah; F. Beaudoin; F.H. Baumann; Brian Popielarski; Asif Chowdhury; Andrea Paganini; Arunima Dasgupta; Aslı Şahin; Bob Mulfinger; Ryan Sporer; Vikas Gupta; Ken Giewont; Rick Carter; Karel Soukup; Ted Letavic

doi:10.1364/cleo_at.2025.pd104_7

Key Points

Achieving over 135GHz bandwidth, these Ge-PIN photodetectors enhance performance in optical communications.
The responsivity of 0.96A/W enables efficient signal detection, with impressive performance for both 120Gb/s NRZ and 240Gb/s PAM4 formats.
Mass-manufacturing techniques were utilized in a 300-mm CMOS silicon photonics foundry to ensure scalability and quality.
This development may pave the way for faster optical communication technologies, highlighting the potential for broader industry applications.

Implication

This study demonstrates mass-manufacturable Ge-PIN photodetectors with over 135GHz bandwidth and strong responsivity, highlighting significant advancements in optical technology.

Abstract

We demonstrate mass-manufacturable, ultra-fast, high-power Ge-PIN-PDs in a 300-mm CMOS silicon photonics foundry, achieving >135GHz bandwidth, 0.96A/W responsivity, -36dB ORL, and high-quality 120Gb/s NRZ and 240Gb/s PAM4 eyes at 1mA photocurrent without TIA.

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Cite This Study

Bian et al. (2025) studied this question.

synapsesocial.com/papers/68d464f131b076d99fa643e5 https://doi.org/10.1364/cleo_at.2025.pd104_7

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Ultra-fast high-power Ge PIN photodetectors with record-high bandwidth responsivity product of 130 GHz·A/W in 300-mm monolithic CMOS silicon photonics foundry

Key Points

Implication

Abstract

Discussion

Cite This Study

Ultra-fast high-power Ge PIN photodetectors with record-high bandwidth responsivity product of 130 GHz·A/W in 300-mm monolithic CMOS silicon photonics foundry

Key Points

Implication

Abstract

Discussion

Cite This Study

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