Analysis demonstrates Purcell enhancement of excitonic transitions in silicon, indicating improved performance in photonic devices.
We examine the Purcell enhancement of T-center 1325.9 nm excitonic transitions in SOI substrates. We use 3 (L3), 5 (L5), and 7 (L7) missing holes in two-dimensional (2D) photonic crystal nanocavities to create the photonic bandgap due to total internal reflection.
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Lin et al. (2025) studied this question.
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