Growth of Two‐Inch Perovskite CsPbBr₃ Single‐Crystal with High Irradiation Resistance for X‐ray Detection

All‐inorganic perovskite CsPbBr 3 crystals have demonstrated considerable promise in γ‐ray and X‐ray detection, owing to their excellent optoelectronic properties. However, the growth of large single crystals (SCs) and the stability of CsPbBr 3 ‐based X‐ray detectors under high‐energy radiation exposure remain unexplored. In this study, a two‐inch CsPbBr 3 single‐crystal is grown using the vertical Bridgman (VB) method, and its irradiation resistance in X‐ray detection performance is investigated after exposure to 60 Co γ‐ray radiation. Compared with unirradiated samples, the crystals irradiated with a dose of 10 Mrad exhibit a higher trap density (1.59 × 10 10 cm −3 ) and a lower resistivity (8.2 × 10 7 Ω cm). However, the Bi/CsPbBr 3 /Au devices with asymmetric electrode structure exhibit an enhanced signal‐to‐noise ratio (14), a stable and low dark current density (7 nA cm −2 ) with a current drift of 5.8 × 10 −15 A cm −1 s −1 V −1 , and a high sensitivity of 55722 µC Gyair −1 cm −2 for X‐ray detection at an electric field of 3000 V cm −1 . Moreover, the irradiated device remained stable X‐ray response characteristics after 220 days aging. These findings highlight the exceptional defect tolerance and irradiation stability of CsPbBr 3 devices for high‐performance radiation detections, offering critical insights for their long‐term deployment in high‐radiation environments.