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September 20, 2025Advanced Functional Materials

High ZT >1.4 Realized in Bi2Se2S via Amorphous–Crystalline Coexistence Structure of Secondary Phase and Bilayer Rotation

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Authors

KHKevin HuangCWChong‐Yu WangYHY. C. Hu

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Overview

TeCl4 doping optimizes electrical and thermal transport in Bi2Se2S, achieving a ZT of 1.44 at 773 K, suggesting potential for mid-temperature thermoelectric applications.

Key Points

  • A ZT of 1.44 at 773 K is achieved through bilayer rotation and structural changes in Bi2Se2S.
  • Doping with TeCl4 narrows the bandgap from 1.07 eV to 0.88 eV, enhancing thermoelectric efficiency with a power factor of 800 µW·m−1·K−2.
  • The introduction of periodic moiré fringes and lattice distortions reduces lattice thermal conductivity to 0.27 W·m−1·K−1, supporting a high ZT.
  • This work paves the way for the first n-type thermoelectric module using Bi2Se2S, demonstrating notable efficiency under varying temperature differences.

Cite This Study

Huang et al. (2025) studied this question.

synapsesocial.com/papers/68d46aae31b076d99fa67840https://doi.org/10.1002/adfm.202518982
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