Research shows improved device performance and longevity in AlGaN-based UVC-LEDs, indicating reduced Mg concentration is key.
The impact of heterostructure variations on the AlGaN-based ultraviolet-C light-emitting diodes (UVC-LEDs) device performance and secondary ion mass spectrometry (SIMS) profiles were studied. To improve the crystalline quality of the p-layer adjacent to the active region based on H-atom behavior from SIMS profile, reducing the Mg concentration to values <1 × 1017 cm-3 increased considerably the device’s lifetime. The obtained long-lifetime of the UVC-LED exhibited an output power of 158 mW at 350 mA.
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Saito et al. (2025) studied this question.
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