Seamless 2D-MoS2/3D-Si heterojunction for white light detection Application

In this study, we investigate the quality of junction formation and its impact on the electronic and optoelectronic properties of two-dimensional (2D) multilayered molybdenum disulfide (MoS2) films directly grown on three-dimensional (3D) p-type silicon (p-Si) <110> substrates. Large-area (15 mm × 15 mm), few-layer (8–10 layers) MoS2 films were synthesized using a facile vapor-phase transport (VPT) method, achieving seamless integration with the underlying Si substrate. Comprehensive structural and morphological characterizations confirm the uniform growth of multilayer 2D MoS2 and the formation of a well-defined 2D–3D MoS2/Si heterojunction interface. The vertical MoS₂/Si heterostructure exhibits a maximum photocurrent of ~2.131 x 10⁻⁶ A and a responsivity of ~13.31 A/W under white-light illumination of 20 µW/cm² at a bias voltage of –3 V. These results highlight the critical role of the engineered heterointerface in enhancing device performance, including improved adhesion and charge transport across the active layers. This work demonstrates the feasibility of integrating a variety of 2D materials, including 2D MoS2, with silicon platforms for CMOS-compatible optoelectronic applications. The findings present promising opportunities for developing next-generation photosensors, photodetectors, p–n heterojunction diodes, and vertical junction transistors based on 2D/3D hybrid architectures.