Study on SiC/BF33 glass hetero-wafer bonding based on plasma activation

This paper uses direct bonding technology to systematically study how plasma treatment parameters affect the bonding performance between silicon carbide (SiC) and boron fluoride (BF33) glass wafers. Unlike previous studies, which focused primarily on homogeneous material bonding, such as SiC-SiC or glass-glass bonding, this study concentrates on the typical heterogeneous material system of SiC and BF33 glass. The study systematically evaluated the influence of RF processing time and chamber vacuum level on bonding performance under low-temperature conditions. The effects of surface modification and the quality of the bonding interface were comprehensively assessed through contact angle measurements, atomic force microscopy (AFM) characterization, and pull-off force testing. The results indicate that extending the RF processing time appropriately enhances surface activity, and that high vacuum conditions facilitate the formation of more uniform and regular microstructures. The combination of these two factors significantly improves the bonding performance of heterogeneous wafers. The optimal bonding performance was achieved under conditions of 80 Pa vacuum pressure and a processing time of 90 seconds. This study provides a clear pathway for optimizing parameters and offers technical support for the low-temperature integration of heterogeneous materials.