This contribution demonstrates advancements in Geant4 simulations and the test phase for silicon carbide detectors, suggesting potential for high-performance applications.
Silicon Carbide (SiC) based detectors have been appointed as possible candidates for new-generation detectors for both radiation and charged particles. SiC is in fact a material characterized by a high radiation hardness, a strong mechanical resistance and thermal stability. This contribution describes the ongoing activity related to the study of Silicon Carbide devices as dosimeter or real time beam monitor, in the framework of SAMOTHRACE ecosystem. In particular, the development of accurate simulations, using the Geant4 toolkit, that consider the possible different configurations and manufactures of the detector, will be reported. This activity is a crucial step in understanding the contribution from the inter-pixel regions.
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D’Agata et al. (2025) studied this question.
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